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       CDBQR0130R-HF SMD Schottky Barrier Diode Page 1 REV:C A mA V V 1 100 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) O C O C +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Comchip Technology CO., LTD. mW 125 PD Power Dissipation QW-G1099 uA V 0.5 0.45 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 1 0 V IF = 1 0 mA 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. 0402/SOD-923F Features - Low reverse current. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 0402/SOD-923F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BQ - Mounting position: Any. - Weight: 0.001 gram(approx.). Io = 1 00 mA VR = 3 0 Volts RoHS Device Halogen Free |